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Can I read Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy on EtoBox?
Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy by Trevor E. Buehl; James M. LeBeau; Susanne Stemmer; Michael A. Scarpulla; Christopher J. Palmstrøm; Arthur C. Gossard is a Engineering article available to read on EtoBox.
What is Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy about?
The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5-6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures.
Who reads Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Trevor E. Buehl; James M. LeBeau; Susanne Stemmer; Michael A. Scarpulla; Christopher J. Palmstrøm; Arthur C. Gossard
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)