Opening book details…
About this Engineering article
Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate by Magari, Y.; Hashimoto, S.; Hamada, K.; Furuta, M. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Magari, Y.; Hashimoto, S.; Hamada, K.; Furuta, M.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2016
- Field
- Engineering (Physical Sciences)
More by Magari, Y.; Hashimoto, S.; Hamada, K.; Furuta, M.
Browse all works by Magari, Y.; Hashimoto, S.; Hamada, K.; Furuta, M.