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Strain and compositional analyses of Al‐rich Al~1– x ~In~ x ~N films grown by MOVPE: impact on the applicability of Vegard's rule by V. Darakchieva; M. Beckers; L. Hultman; M. Xie; B. Monemar; J.‐F. Carlin; N. Grandjean is a Engineering article available to read on EtoBox.

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## Abstract We have studied composition and strain in Al~1–__x__~ In~__x__~ N films with 0.128__≤__ x__≤__ 0.22 grown on GaN‐buffered sapphire substrates by metalorganic vapor phase epitaxy. A good agreement between the In contents determined by Rutherford backscattering spectrometry (RBS) and Xray diffraction (XRD) is found for x__≤__ 18, suggesting applicability of Vegard's rule in the narrow compositional range around the lattice matching to GaN. The increase of the In content up to __x__ = 0.22 leads to a formation of sub‐layers with a higher composition, accompanied by deviations from Vegard's rule. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Strain and compositional analyses of Al‐rich Al~1– x ~In~ x ~N films grown by MOVPE: impact on the applicability of Vegard's rule?

Author

V. Darakchieva; M. Beckers; L. Hultman; M. Xie; B. Monemar; J.‐F. Carlin; N. Grandjean

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)