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Selective and non-selective growth by GSMBE/ULPCVD for heterojunction bipolar transistors by G Breton; N Woods; H Graoui; J.J Harris; J Zhang is a Engineering article available to read on EtoBox.

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The challenges for thin film epitaxial techniques for the realisation of HBT device structures are: providing a high contrast between selective epitaxial growth (SEG) and nonselective epitaxial growth (NSEG) on patterned substrates; and fine control of the Ge concentration profile in the base region and the doping levels for all layers. A Gas Source MBE system has been modified for operation either in the conventional GSMBE mode or an Ultra Low Pressure CVD mode, namely the 'by-pass mode'. This allows use of two growth modes to achieve the specified device structures. In particular, it has been demonstrated that a high As doping level (1.1 X 10" ~m -~) at a relatively low growth temperature and a rapid conversion to the nonselective mode, can be obtained using the by-pass mode. Non-graded and graded HBT test structures have been grown and characterised by SIMS and X-ray diffraction in order to calibrate the doping levels, the Ge concentration in the base region and the thickness of the layers.

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Author

G Breton; N Woods; H Graoui; J.J Harris; J Zhang

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)