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About this Engineering article
Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs by Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2018
- Field
- Engineering (Physical Sciences)
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