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About this Materials Science article
Atomic Layer Deposited Oxygen-Deficient TaO x Layers for Electroforming-Free and Reliable Resistance Switching Memory by Kuzmichev, Dmitry S.; Lebedinskii, Yuri Y.; Hwang, Cheol Seong; Markeev, Andrey M. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Kuzmichev, Dmitry S.; Lebedinskii, Yuri Y.; Hwang, Cheol Seong; Markeev, Andrey M.
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - VCH Verlag GmbH & CO. KGaA; Wiley (ISSN 1862-6254)
- Published
- 2018
- Language
- EN
- Field
- Materials Science (Physical Sciences)