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Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity by Sidhartha Dash; Saumendra Kumar Mohanty; Guru Prasad Mishra is a Engineering article available to read on EtoBox.

What is Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity about?

In this paper, a new Si 0.6 Ge 0.4 /Si heterostructure tunneling field-effect transistor with segmented drain (SiGe/Si SD TFET) is proposed and simulated by Silvaco ATLAS simulator. The drain segmentation increases the tunneling barrier width at the drain/ channel interface and hence reduces ambipolar current (I amb ) considerably. Moreover, the amalgam of Si 0.6 Ge 0.4 source and silicon channel allows much improved On-state current (I on ) with lower Off-state leakage current (I off ). The presence of high bandgap silicon material keeps the lower recombination rate of the carriers in the channel region, thus provides a much higher I on / I off ratio of 5.64 × 10 11 . The segmented drain exhibits more than 4-decades improvement in I amb without affecting I on and I off . The thickness and doping profile of the segmented drain region are calibrated to achieve a higher I on /I amb ratio of 3.29 × 10 9 with an average subthreshold swing (SS) of 42 mV/decade. The investigation is further extended by considering the interface trap charges (ITCs) at the HfO 2 /Si interface for different positive and negative density values.

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Author

Sidhartha Dash; Saumendra Kumar Mohanty; Guru Prasad Mishra

Publisher

Springer Science and Business Media LLC

Published

2021

Language

EN

Field

Engineering (Physical Sciences)