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About this Physics and Astronomy article
Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects by Hu, W. D.; Chen, X. S.; Quan, Z. J.; Xia, C. S.; Lu, W.; Ye, P. D. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Hu, W. D.; Chen, X. S.; Quan, Z. J.; Xia, C. S.; Lu, W.; Ye, P. D.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2006
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
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