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TEM observation of β-FeSi2(1 1 0),(1 0 1)/Si(1 1 1) layers grown by reactive deposition epitaxy in the presence of an Sb flux by T. Arakawa; G. Shao; S. Makiuchi; T. Ono; H. Tatsuoka; H. Kuwabara is a Engineering article available to read on EtoBox.

What is TEM observation of β-FeSi2(1 1 0),(1 0 1)/Si(1 1 1) layers grown by reactive deposition epitaxy in the presence of an Sb flux about?

A TEM study has been carried out to clarify the structural property of b-FeSi 2 (1 1 0),(1 0 1)/Si(1 1 1) layers grown by reactive deposition epitaxy (RDE) in the presence of an Sb flux. It is found that the layer is continuous and relatively smooth, and domains in the layer are distributed below and above the original substrate surface. The formation of internal planar defects due to 901-related order domains is partly suppressed, and equiaxed domains without the planar defects are formed in the b-FeSi 2 layer. The result is compared with that of the layer grown by conventional RDE, and the improvement of the structural property is confirmed for the Sb-mediated RDE grown layer.

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Author

T. Arakawa; G. Shao; S. Makiuchi; T. Ono; H. Tatsuoka; H. Kuwabara

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)