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Effect of the Ion Bombardment Energy on Silicon Dioxide Films Deposited from Oxygen/tetraethoxysilane Plasmas in a Helicon Reactor by D. Goghero; A. Goullet; G. Borvon; G. Turban is a Engineering article available to read on EtoBox.

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Silicon dioxide films are deposited on silicon substrates from oxygen/tetraethoxysilane (TEOS) plasmas in a helicon reactor operated at low pressure (5 mtorr). The effect of the negative dc self-bias voltage V b (0 to À 200 V) on structural and electrical bulk properties of SiO 2 films is investigated. The structural characterization has been performed using Fourier-transform infrared (FTIR) spectroscopy, spectroscopic ellipsometry and wet etching. Electrical measurements including capacitance -voltage (C -V), current -voltage (I -V) and constant current stressing (CCS) have been carried out on metal -oxide -semiconductor (MOS) capacitors. As soon as a dc self-bias is applied (jV b j z 50 V), a significant enhancement of the oxide quality is observed in terms of macroscopic densification and reduction in the porosity. These modifications in the structural properties of the deposited SiO 2 films are correlated with an improvement in the I -V characteristics but C -V and CCS measurements revealed that limiting the substrate bias at À 50 V leads to best quality silicon dioxide films.

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Author

D. Goghero; A. Goullet; G. Borvon; G. Turban

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)