About this scholarly article

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA) by Huang, Xing; Lee, Dong Young; Bondarenko, Volodymyr; Baker, Art; Sheridan, David C.; Huang, Alex Q.; Baliga, B. Jayant is a scholarly article available to read on EtoBox.

Author

Huang, Xing; Lee, Dong Young; Bondarenko, Volodymyr; Baker, Art; Sheridan, David C.; Huang, Alex Q.; Baliga, B. Jayant

Publisher

IEEE

Published

2014

Language

EN