Opening book details…
About this Engineering article
Device design for the submicrometer p-channel FET with n+polysilicon gate by Cham, K.M.; Shang-Yi Chiang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Cham, K.M.; Shang-Yi Chiang
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1984
- Language
- EN
- Field
- Engineering (Physical Sciences)