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About this Engineering article
In situ I V study of swift ( 100 MeV) O 6 ion-irradiated Pd/n-Si devices by Srivastava, P C; Sinha, O P; Tripathi, J K; Kabiraj, D is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Srivastava, P C; Sinha, O P; Tripathi, J K; Kabiraj, D
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
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