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N-Channel HiPerFET Specifications by estenio is a document available to read on EtoBox.

This document provides specifications for a PolarTM HiPerFETTM N-Channel Enhancement Mode power MOSFET. It lists maximum ratings, characteristic values, package details, and applications. The MOSFET has a maximum drain-source voltage of 1000V, on-resistance below 1.4 ohms, and fast switching times.

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estenio

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EN