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About this Engineering article
Short-channel effect on the threshold voltage of accumulation-type, inversion-type and intrinsic-type SOI PMOS devices by J.B Kuo; K.W Su; Y.G Chen; S.S Chen is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J.B Kuo; K.W Su; Y.G Chen; S.S Chen
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)