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Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn by Kenji Iso; Hirotaka Ikeda; Tae Mochizuki; Takafumi Odani; Satoru Izumisawa is a Physics and Astronomy article available to read on EtoBox.
What is Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn about?
The compatibility of impurity doping and the suppression of residual stress are crucial for fabricating a semi‐insulating GaN (SI‐GaN) substrate. Herein, a new method to fabricate several SI‐GaN substrates, including a dual‐layer SI‐GaN substrate comprising upper ≈100 μm‐thick GaN doped with Fe, C, or Mn and a lower ≈300 μm‐thick unintentionally doped GaN, using hydride vapor‐phase epitaxy is proposed. As a result, substrates doped with Fe, C, or Mn are successfully produced without cracks and pits. Resistivities around a doping concentration of ≈10^18^ cm^−3^ are up to 6.6 × 10^8^, >10^12^, and >10^12^ Ω cm at room temperature, respectively. The residual stress of the dual‐layer SI‐GaN film is also evaluated.
Who reads Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Kenji Iso; Hirotaka Ikeda; Tae Mochizuki; Takafumi Odani; Satoru Izumisawa
- Publisher
- Wiley
- Published
- 2022
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)