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About this Engineering article
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics by Toifl, Alexander; Simonka, Vito; Hossinger, Andreas; Selberherr, Siegfried; Grasser, Tibor; Weinbub, Josef is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Toifl, Alexander; Simonka, Vito; Hossinger, Andreas; Selberherr, Siegfried; Grasser, Tibor; Weinbub, Josef
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2019
- Field
- Engineering (Physical Sciences)