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Can I read Deep level transient spectroscopy on charge traps in high-k ZrO2 on EtoBox?
Deep level transient spectroscopy on charge traps in high-k ZrO2 by Hua-Min Li; Gang Zhang; Won Jong Yoo is a Engineering article available to read on EtoBox.
What is Deep level transient spectroscopy on charge traps in high-k ZrO2 about?
## Deep traps Trap depth Cross section The deep trap properties of high-dielectric-constant (k) ZrO 2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO 2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10 -16 cm 2 and ∼ 1.0 × 10 16 cm -3 , respectively. DLTS of ZrO 2 dielectrics can be used to examine the threshold voltage shift (ΔV th ) during the operation of SONOS-type flash memory devices, which employ high-k materials.
Who reads Deep level transient spectroscopy on charge traps in high-k ZrO2?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hua-Min Li; Gang Zhang; Won Jong Yoo
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)