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MOCVD of Al2O3 Films Using New Dialkylaluminum Acetylacetonate Precursors: Growth Kinetics and Process Yields by G. A. Battiston; G. Carta; G. Cavinato; R. Gerbasi; M. Porchia; G. Rossetto is a Materials Science article available to read on EtoBox.

What is MOCVD of Al2O3 Films Using New Dialkylaluminum Acetylacetonate Precursors: Growth Kinetics and Process Yields about?

Dimethyl, diethyl, and di-iso-butyl aluminum acetylacetonate compounds were synthesized to deposit Al 2 O 3 thin films by lowpressure metal±organic (LP-MO)CVD. Alumina films were grown in the temperature range 400±520 C under an oxygen or water vapor atmosphere. A kinetic model was applied to analyze the experimental data and to compare the properties of the three precursors. The model, supported by in-line Fourier transform infrared (FTIR) measurements, clearly distinguished the rate-determining steps of the heterogeneous process, with kinetic constants correlated to the molecular structure of the precursors. A method of optimizing deposition conditions, on the basis of the uniformity of the obtained thin films, is discussed.

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Author

G. A. Battiston; G. Carta; G. Cavinato; R. Gerbasi; M. Porchia; G. Rossetto

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0948-1907)

Published

2001

Language

EN

Field

Materials Science (Physical Sciences)