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This study investigates the resistive switching characteristics of quasi-2D halide perovskites, specifically (PEA)2Cs3Pb4I13, in comparison to traditional 3D halide perovskites like CsPbI3 for resistive random-access memory (ReRAM) devices. The (PEA)2Cs3Pb4I13 devices exhibit an ON/OFF ratio of over 10^9, significantly higher than the ~10^6 ratio of CsPbI3 devices, and demonstrate better long-term stability under ambient conditions. These findings suggest that quasi-2D halide perovskites could be a promisin

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educare.4.al

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EN