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This paper reviews the trends and limitations of CMOS scaling from 1 µm to 0.1 µm, highlighting factors such as electron thermal energy and tunneling leakage that restrict further downscaling. It discusses design strategies, including a superhalo doping profile, to extend CMOS technology to channel lengths of 20 nm and potentially 10 nm with low-temperature operation. The paper emphasizes the challenges of increasing standby and active power as dimensions shrink, necessitating innovative design solutions to

Author

NK NK

Language

EN