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About this Engineering article
Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] by H. Yu; L. Mccarthy; H. Xing; P. Waltereit; L. Shen; S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- H. Yu; L. Mccarthy; H. Xing; P. Waltereit; L. Shen; S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2005
- Field
- Engineering (Physical Sciences)