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What is Characterization of AlN and AlScN Film ICP Etching about?

This research paper investigates the inductively coupled plasma (ICP) etching characteristics of Aluminum Nitride (AlN) and Aluminum Scandium Nitride (AlScN) thin films for micro/nano fabrication applications. The study reports optimized etching profiles, rates, and selectivities for both materials, achieving significant results such as a 230 nm/min etching rate for AlN and a high-quality contour mode resonator operating at approximately 400 MHz. The findings contribute to the understanding of etching proce

Author

wenxian

Language

EN