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Can I read Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sharp doping profiles for light emitting diode applications on EtoBox?
Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sharp doping profiles for light emitting diode applications by A.M. Titova; V.G. Shengurov; D.O. Filatov; S.A. Denisov; V.Yu. Chalkov; M.V. Ved'; A.V. Zaitzev; A.A. Sushkov; N.A. Alyabina is a Materials Science article available to read on EtoBox.
What is Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sharp doping profiles for light emitting diode applications about?
The prototype light emitting diodes (LEDs) were fabricated from the n + -Ge/p + -Si(0 0 1) heterostructures grown by low-temperature Hot Wire Chemical Vapor Deposition. The n + -Ge epitaxial layers were heavily doped with P from a sublimation solid-phase GaP source. Abrupt profiles of the donor impurity concentrations at the n + -Ge/ p + -Si heterojunctions were obtained. Negative differential resistance was observed in the current-voltage curves of the LEDs at forward bias. Electroluminescence (EL) related to the indirect (phonon-assisted) interband radiative optical transitions in the n + -Ge layers (from the L-valleys of the conduction band into the Г-point in the valence band) was observed at room temperature. The EL intensity increased with increasing P concentration in the n + -Ge layers.
Who reads Epitaxial n+-Ge/p+-Si(0 0 1) heterostructures with ultra sharp doping profiles for light emitting diode applications?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- A.M. Titova; V.G. Shengurov; D.O. Filatov; S.A. Denisov; V.Yu. Chalkov; M.V. Ved'; A.V. Zaitzev; A.A. Sushkov; N.A. Alyabina
- Publisher
- Elsevier BV
- Published
- 2023
- Language
- EN
- Field
- Materials Science (Physical Sciences)