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About this Engineering article
Strain relaxation and misfit dislocations in compositionally graded Si1 − xGex layers on Si by J.H. Li; V. Holy; G. Bauer; M. Hohnisch; H.-J. Herzog; F. Schäffler is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J.H. Li; V. Holy; G. Bauer; M. Hohnisch; H.-J. Herzog; F. Schäffler
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)
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