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About this Engineering article
Formation and microstructural development of TiSi2 in (111)Si by Ti ion implantation and annealing at 950 °C by Jin, S.; Aindow, M.; Zhang, Z.; Chen, L.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Jin, S.; Aindow, M.; Zhang, Z.; Chen, L.J.
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP); Research Square (ISSN 0884-2914)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)
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