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About this Engineering article
Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors by Lin, Chung-Han; Merz, T. A.; Doutt, D. R.; Hetzer, M. J.; Joh, Jungwoo; del Alamo, JesuÌs A.; Mishra, U. K.; Brillson, L. J. is a Engineering article available to read on EtoBox.
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- Author
- Lin, Chung-Han; Merz, T. A.; Doutt, D. R.; Hetzer, M. J.; Joh, Jungwoo; del Alamo, JesuÌs A.; Mishra, U. K.; Brillson, L. J.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2009
- Field
- Engineering (Physical Sciences)