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Nonlinear Polaritons in a Monolayer Semiconductor Coupled to Optical Bound States in the Continuum by Kravtsov, Vasily; Khestanova, Ekaterina; Benimetskiy, Fedor A.; Ivanova, Tatiana; Samusev, Anton K.; Sinev, Ivan S.; Pidgayko, Dmitry; Mozharov, Alexey M.; Mukhin, Ivan S.; Lozhkin, Maksim S.; Kapitonov, Yuri V.; Brichkin, Andrey S.; Kulakovskii, Vladimir D.; Shelykh, Ivan A.; Tartakovskii, Alexander I.; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Iorsh, Ivan V. is a Engineering article available to read on EtoBox.

What is Nonlinear Polaritons in a Monolayer Semiconductor Coupled to Optical Bound States in the Continuum about?

Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in these systems is particularly promising for the enhancement of nonlinear optical processes and the development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix the optical BIC in a photonic crystal slab with excitons in the atomically thin semiconductor MoSe~2~ to form nonlinear exciton-polaritons with a Rabi splitting of 27 meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into the far field toward the BIC wavevector, in combination with effective reduction of the excitonic disorder through motional narrowing, results in small polariton linewidths below 3 meV. Together with a strongly wavevector-dependent __Q__-factor, this provides for the enhancement and control of polariton–polariton interactions and the resulting nonlinear optical effects, paving the way toward tuneable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics.

Who reads Nonlinear Polaritons in a Monolayer Semiconductor Coupled to Optical Bound States in the Continuum?

It is typically read by researchers, students, and practitioners in Engineering.

Author
Kravtsov, Vasily; Khestanova, Ekaterina; Benimetskiy, Fedor A.; Ivanova, Tatiana; Samusev, Anton K.; Sinev, Ivan S.; Pidgayko, Dmitry; Mozharov, Alexey M.; Mukhin, Ivan S.; Lozhkin, Maksim S.; Kapitonov, Yuri V.; Brichkin, Andrey S.; Kulakovskii, Vladimir D.; Shelykh, Ivan A.; Tartakovskii, Alexander I.; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Iorsh, Ivan V.
Publisher
Nature Publishing Group; Springer Science and Business Media LLC (ISSN 2047-7538)
Published
2020
Language
EN
Field
Engineering (Physical Sciences)

More by Kravtsov, Vasily; Khestanova, Ekaterina; Benimetskiy, Fedor A.; Ivanova, Tatiana; Samusev, Anton K.; Sinev, Ivan S.; Pidgayko, Dmitry; Mozharov, Alexey M.; Mukhin, Ivan S.; Lozhkin, Maksim S.; Kapitonov, Yuri V.; Brichkin, Andrey S.; Kulakovskii, Vladimir D.; Shelykh, Ivan A.; Tartakovskii, Alexander I.; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Iorsh, Ivan V.

Browse all works by Kravtsov, Vasily; Khestanova, Ekaterina; Benimetskiy, Fedor A.; Ivanova, Tatiana; Samusev, Anton K.; Sinev, Ivan S.; Pidgayko, Dmitry; Mozharov, Alexey M.; Mukhin, Ivan S.; Lozhkin, Maksim S.; Kapitonov, Yuri V.; Brichkin, Andrey S.; Kulakovskii, Vladimir D.; Shelykh, Ivan A.; Tartakovskii, Alexander I.; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Iorsh, Ivan V.