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About this Physics and Astronomy article

Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET by Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.; Abouelatta, Mohamed is a Physics and Astronomy article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Physics and Astronomy.

Author
Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.; Abouelatta, Mohamed
Publisher
Elsevier Science; Elsevier ; Elsevier Inc.; Elsevier BV (ISSN 0749-6036)
Published
2015
Field
Physics and Astronomy (Physical Sciences)

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