About this scholarly article

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide by Wu, E.; Lai, W.; Khare, M.; Sune, J.; Han, L.-K.; McKenna, J.; Bolam, R.; Harmon, D.; Strong, A. is a scholarly article available to read on EtoBox.

Author

Wu, E.; Lai, W.; Khare, M.; Sune, J.; Han, L.-K.; McKenna, J.; Bolam, R.; Harmon, D.; Strong, A.

Publisher

IEEE

Published

2002

Language

EN