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About this Engineering article
Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy by Wong, C. P.; Kasim, J.; Liu, J. P.; See, A.; Shen, Z. X. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wong, C. P.; Kasim, J.; Liu, J. P.; See, A.; Shen, Z. X.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2010
- Field
- Engineering (Physical Sciences)
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