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α -SiC layers grown on silicon via nano-sized silicon nitride precursor route by Ruchuan Liu; Beifang Yang; Zhengping Fu; Qian Chen; Lin Hong; Ming Li; Zongcai Liu; Yaozhong Ruan is a Engineering article available to read on EtoBox.
What is α -SiC layers grown on silicon via nano-sized silicon nitride precursor route about?
a-SiC thin layers were successfully grown on silicon (111) by pyrolysis of the organic liquid dip-coating ®lms and polyimide Langmuir± Blodgett (LB) ®lms containing nanometer sized amorphous silicon nitride powders (NASNP) at 900±10008C in vacuum. The products were characterized by X-ray diffraction (XRD), infrared absorption (IR) and Raman spectra, the results of which strongly support the formation of preferred orientated 4H-SiC in the layers by pyrolysis of LB ®lms containing NASNP. Based on the IR spectra of samples pyrolyzed at different temperatures and the computed values of the Gibbs free energy changes of the reactions, the mechanism of formation of a-SiC is discussed.
Who reads α -SiC layers grown on silicon via nano-sized silicon nitride precursor route?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ruchuan Liu; Beifang Yang; Zhengping Fu; Qian Chen; Lin Hong; Ming Li; Zongcai Liu; Yaozhong Ruan
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)