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Can I read Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy on EtoBox?
Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy by H Heissenstein; H Sadowski; R Helbig is a Physics and Astronomy article available to read on EtoBox.
What is Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy about?
We have irradiated 4H-and 6H-silicon carbide (SiC) samples with neutrons with an energy distribution of a nuclear reactor. In this way we generated a phosphorus doping of B4 Â 10 15 cm À3 . We chose 40 and 50 mm thick epitaxial layers with a nitrogen doping of 7 Â 10 14 cm À3 on substrates with B10 18 cm À3 of nitrogen. The substrates of these samples were sucessively removed by mechanical polishing and reactive ion etching. Afterwards the samples were characterized by IR-transmission. In this way we could distinguish between nitrogen-and phosphorus-related absorption. So we could assign in 4H-and in 6H-SiC several absorption lines to electronic transitions of the phosphorus donor.
Who reads Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- H Heissenstein; H Sadowski; R Helbig
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 2002
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)