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Magnetoresistance of low dimensional mesoscopic honeycomb-shaped GaAs networks by J. Galibert; V.A. Samuilov; V.K. Ksenevich; T. Ferrus; M. Rafailovich; J. Sokolov is a Physics and Astronomy article available to read on EtoBox.
What is Magnetoresistance of low dimensional mesoscopic honeycomb-shaped GaAs networks about?
A novel and simple method of fabrication of mesoscopic honeycomb-shaped networks was applied in order to decrease the dimension of the 2-D gas with electron density of approximately 1;10 cm\ in the initial GaAs/AlGaAs -doped heterostructures. The characteristic dimensions of the size of hexagonal cell and the thickness of bonds of the network were approximately 500 and 70 nm, respectively. Magnetoresistance in pulsed magnetic "elds up to 34 T, current-voltage (I(V )) curves and the temperature dependence of resistance in the mesoscopic networks were measured at temperatures 1.9}300 K. At B"0, the behaviour of the resistance is typical of a two-dimensional insulator. Below approximately 20 K, the data follows the Mott variable-range-hopping mechanism for 2-D. The observed negative magnetoresistance at low magnetic "elds was related to quantum interference in the variable range hopping. At magnetic "elds higher than approximately 5 T, the magnetoresistance is positive and saturates at "elds B'12 T.
Who reads Magnetoresistance of low dimensional mesoscopic honeycomb-shaped GaAs networks?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- J. Galibert; V.A. Samuilov; V.K. Ksenevich; T. Ferrus; M. Rafailovich; J. Sokolov
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0921-4526)
- Published
- 2001
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)