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This article presents a novel in-memory computing architecture utilizing monolayer MoS2 transistors in a two-transistor-one-capacitor (2T-1C) configuration to efficiently perform multiply-accumulate (MAC) operations, crucial for artificial intelligence applications. The proposed design leverages the ultralow leakage current of MoS2 transistors to enable long retention times for multi-level voltage storage, facilitating high-speed and energy-efficient computations. Experimental results demonstrate the archit

Author

Sameer Nadaf

Language

EN