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About this Engineering article
A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs by Di Benedetto, Luigi (author);Licciardo, Gian Domenico (author);Erlbacher, Tobias (author);Bauer, Anton J. (author);Liguori, Rosalba (author);Rubino, Alfredo (author) is a Engineering article available to read on EtoBox.
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- Author
- Di Benedetto, Luigi (author);Licciardo, Gian Domenico (author);Erlbacher, Tobias (author);Bauer, Anton J. (author);Liguori, Rosalba (author);Rubino, Alfredo (author)
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)