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About this Engineering article
7300. Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxy: Y Koide et al,J Appl Phys, 68, 1990, is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 1991
- Language
- EN
- Field
- Engineering (Physical Sciences)