About this scholarly article

2011 IEEE International Conference on Computer Science and Automation Engineering - A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration by Mahabadi, S. E. Jamali; Orouji, Ali A.; Moghadam, Hamid Amini; Keshavarzi, Parviz is a scholarly article available to read on EtoBox.

Author

Mahabadi, S. E. Jamali; Orouji, Ali A.; Moghadam, Hamid Amini; Keshavarzi, Parviz

Publisher

IEEE

Published

2011

Language

EN