About this scholarly article

2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538) - Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation process by Liou, Y.H.; Chen, Y.S.; Wu, C.S.; Tsai, C.S.; Chi, M. is a scholarly article available to read on EtoBox.

Author

Liou, Y.H.; Chen, Y.S.; Wu, C.S.; Tsai, C.S.; Chi, M.

Publisher

American Vacuum Soc

Published

2001

Language

EN