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Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor by Ranjit Pati; Puspamitra Panigrahi; Partha Pratim Pal; Brahim Akdim; Ruth Pachter is a Physics and Astronomy article available to read on EtoBox.

What is Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor about?

We report a first-principles quantum transport study in a single wall boron nitride nanotube sandwiched between a pair of gold electrodes. The non-equilibrium Green's function approach, in which the electric field effect is explicitly included within a many body framework, is used to calculate the channel current, I sd , in the presence of a transverse gate field, E g . The E g is found to have a profound effect on the electronic current between the source and drain -revealing transistor behavior. The significant modulation in electronic current (ON-OFF current ratio of $ 18 at V sd of 3 V) is attributed to the giant Stark shift caused by the gate field.

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Author

Ranjit Pati; Puspamitra Panigrahi; Partha Pratim Pal; Brahim Akdim; Ruth Pachter

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0009-2614)

Published

2009

Language

EN

Field

Physics and Astronomy (Physical Sciences)