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What is Simulation 2 about?

The document details the computational analysis and device profiling of the Extended Source Dual Metal Gate TFET using Synopsys Sentaurus TCAD, focusing on the tunneling process through the source-channel junction. It emphasizes the importance of the NL-BTBT model for accurate tunneling probabilities and device efficiency, while also addressing the need for Fermi-Dirac statistics in heavily doped areas. The device features a multi-level hetero-junction source region designed to maximize tunneling efficiency

Author

piyushamarpur9504

Language

EN