About this scholarly article

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN by Sakai, Yusuke; Selvaraj, S. Lawrence; Oda, Osamu; Egawa, Takashi is a scholarly article available to read on EtoBox.

Author

Sakai, Yusuke; Selvaraj, S. Lawrence; Oda, Osamu; Egawa, Takashi

Publisher

American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)

Published

2013