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About this Engineering article
GaAlAs/GaAs floating-gate memory devices with graded-gap injector grown by molecular-beam epitaxy by Beltram, F.; Capasso, F.; Walker, J.F.; Malik, R.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Beltram, F.; Capasso, F.; Walker, J.F.; Malik, R.J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1988
- Language
- EN
- Field
- Engineering (Physical Sciences)
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