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What is GT40G121 IGBT Datasheet Overview about?

The document summarizes the GT40G121 insulated gate bipolar transistor (IGBT) from Toshiba. It is an enhancement-mode, high speed IGBT designed for current resonance inverter switching applications. Key specifications include a turn-off time of 0.54 microseconds maximum and a collector-emitter saturation voltage of 1.8 volts typical at 60 amps of collector current. Graphs show characteristics of the collector current, collector-emitter voltage, and gate-emitter voltage at different temperatures.

Author

AhmedHelmy

Language

EN