About this scholarly article

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A near-threshold SRAM design with transient negative bit-line voltage scheme by Jiang, Chengzhi; Ye, Zuochang; Wang, Yan is a scholarly article available to read on EtoBox.

Author

Jiang, Chengzhi; Ye, Zuochang; Wang, Yan

Publisher

IEEE

Published

2015

Language

EN