About this document

Datasheet 2sk291 Hitachi by Madeeha Asif is a document available to read on EtoBox.

The 2SK291 is a Silicon N-Channel Junction FET designed for low frequency low noise amplification applications. It has absolute maximum ratings including a gate to drain voltage of -15V and a drain current of 50mA, with various electrical characteristics outlined for operation at 25°C. The document also includes cautions regarding product use and intellectual property rights, as well as contact information for Hitachi

Author

Madeeha Asif

Language

EN