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Local strain distribution of hexagonal GaN pyramids by Hoffmann, A; Siegle, H; Kaschner, A; Eckey, L; Thomsen, C; Christen, J; Bertram, F; Schmidt, M; Hiramatsu, K; Kitamura, S; Sawaki, N is a Engineering article available to read on EtoBox.

What is Local strain distribution of hexagonal GaN pyramids about?

Self-organized hexagonal GaN pyramids of 5 m width and covered by six +1 1 0 1, side facets were investigated by spatially resolved cathodoluminescence and micro-Raman spectroscopy. Beside a narrow luminescence peak at 355 nm, originating from the 2 m thick GaN layer, an additional broad luminescence band was observed from the GaN pyramids around a wavelength of 357 nm. A strong energy shift is found along the +1 1 0 1, pyramidal facets and directly visualized by monochromatic CL images and linescans. The effect of the thermal strain due to the mismatch of the thermal expansion coefficient of the various layers involved was analyzed by micro-Raman spectroscopy and by varying the temperature from 5 K to room temperature. A strong impact of the free-carrier concentration on the local band gap and its temperature dependence was found.

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Author

Hoffmann, A; Siegle, H; Kaschner, A; Eckey, L; Thomsen, C; Christen, J; Bertram, F; Schmidt, M; Hiramatsu, K; Kitamura, S; Sawaki, N

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)