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About this Engineering article
STUDY OF TRAPPING RATE AND DEFECT DENSITY IN AlSi 11.35 Mg 0.23 BY POSITRON ANNIHILATION TECHNIQUE by ABDEL-RAHMAN, M. A.; ABDALLAH, M. S.; BADAWI, EMAD A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- ABDEL-RAHMAN, M. A.; ABDALLAH, M. S.; BADAWI, EMAD A.
- Publisher
- World Scientific Publishing Company; World Scientific ; World Scientific Publishing Co; World Scientific Pub Co Pte Lt (ISSN 0218-625X)
- Published
- 2004
- Language
- EN
- Field
- Engineering (Physical Sciences)
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