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About this Engineering article
Electron velocity overshoot in sub-100-nm channel length metal–oxide–semiconductor field-effect transistors at 77 and 300 K by Shahidi, G. G. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Shahidi, G. G.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 1988
- Field
- Engineering (Physical Sciences)