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This document discusses the advancements in silicon carbide (SiC) technology, particularly the 4H-SiC polytype, which is promising for power electronics applications. It highlights a Special Issue featuring research on device processing, material growth, and applications of SiC, categorized into three themes: fundamental characteristics, improved device development, and emerging technology applications. The collection aims to provide insights into the performance, reliability, and innovative processing solu

Author

halderarnob999

Language

EN